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| 2SK3079A Preliminary TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3079A 470 MHz Band Amplifier Applications Unit: mm Output power: Po = 33.50dBmW (2.2 W) (min) Gain: Gp = 13.50dB (min) Drain Efficiency: D = 50.0% (min) * * * Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Gate-source voltage Drain current Power dissipation Channel temperature Storage temperature range Symbol VDSS VGSS ID PD (Note 1) Tch Tstg Rating 10 3 3 20.0 150 -45~150 Unit V V A W C C Note 1: Tc = 25C JEDEC 2-5N1A Marking Type Name JEITA TOSHIBA UD Dot F ** Lot No. Electrical Characteristics (Ta = 25C) Characteristics Output power Drain efficiency Power gain Threshold voltage Drain cut-off current Gate-source leakage current Symbol PO D Gp Vth IDSS IGSS (Note 2) 3/4 Test Condition VDS = 4.5 V, Iidle = 50 mA (VGS = adjust) f = 470 MHz, Pi = 20dBmW ZG = ZL = 50 VDS = 4.5 V, ID = 0.5 mA VDS = 10 V, VGS = 0 V VGS = 5 V, VDS = 0 V VDS = 5 V, f = 470 MHz, Pi = 20dBmW, Po = 33.5dBmW (VGS = adjust) VSWR LOAD 10:1 all phase Min 33.5 50.0 13.5 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 0.8 3/4 3/4 Max 3/4 3/4 3/4 3/4 10 5 Unit dBmW % dB V A A 3/4 Load mismatch No degradation Caution: This is transistor the electrostatic sensitive device. Please handle with caution. Note 2: When the RF output power test fixture is used 1 2002-01-09 2SK3079A Test Circuit Pi ZG = 50 W 20 pF L1 20 pF 10000 pF 2200 pF 3.3 W 2200 pF 2200 pF Po ZL = 50 W 13 pF 20 pF 10 mF VDS L2 680 kW VGS 10000 pF 2 2002-01-09 2SK3079A Pi - Po, Gp, hD (f = 470 MHz, Iidle = 50 mA, Vds = 4.5 V, Tc = 25C) 40 Po (dBmW) Gp (dB) hD (%) 60 Iidle - Gp, hD (f = 470 MHz, Pi = 20dBmW, Vds = 4.5 V, Tc = 25C) 17 60 35 50 16 (dBmW), Gp (dB) 30 40 (dB) (%) 25 30 15 55 DD 20 20 14 Po 15 10 Gp Gp (dB) hD (%) 10 0 10 20 0 30 13 0 25 50 75 50 100 Pi (dBmW) Iidle (mA) Pi - Po (f = 470 MHz, Vds = 4.5 V, Tc = 25C) 40 38 36 34 30 28 26 24 22 20 18 16 14 12 10 0 10 20 Iidle = 50 mA Iidle = 30 mA Iidle = 70 mA 30 32 1.2 1.0 0.8 0.6 0.4 1.4 Pi - Ids (f = 470 MHz, Vds = 4.5 V, Tc = 25C) (dBmW) Drain current Po (A) Iidle = 50 mA 0.2 0.0 0 Iidle = 30 mA Iidle = 70 mA 10 20 30 Pi (dBmW) Pi (dBmW) Vds - Gp, hD (f = 470 MHz, Pi = 20dBmW, Iidle = 50 mA, Tc = 25C) 20 18 16 14 Gp Eff 70 68 66 64 40 39 36 34 32 30 28 26 24 22 20 18 16 14 12 10 0 Pi - Po (f = 470 MHz, Iidle = 50 mA, Tc = 25C) Gp (dB) 10 8 6 4 2 0 0 2 4 6 60 58 56 54 52 50 8 DD (%) 12 62 Po (dBmW) Vdd = 4.5 V Vdd = 2.4 V Vdd = 3.6 V Vdd = 6.0 V 0 20 30 Vds (V) Pi (dBmW) 3 2002-01-09 DD (%) 2SK3079A Pi - Ids (f = 470 MHz, Iidle = 50 mA, Tc = 25C) 1.6 1.4 1.2 (A) 1.0 Drain current 0.8 0.6 0.4 0.2 0.0 0 Vdd = 4.5 V Vdd = 2.4 V Vdd = 3.6 V Vdd = 6.0 V 10 20 30 Pi (dBmW) Caution: These are typical curves and devices are not necessarily guaranteed at these curves. 4 2002-01-09 2SK3079A RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 5 2002-01-09 |
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